2SD313 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD313 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD313
DESCRIPTION
·With TO-220C package
·Complement to type 2SB507
·Low collector saturation voltage
APPLICATIONS
·Designed for the output stage of 15W
to 25W AF power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IBB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rθjc
Thermal resistance junction to case
·
VALUE
60
60
5
3
8
1
30
150
-50~150
UNIT
V
V
V
A
A
A
W
℃
℃
MAX
4.16
UNIT
℃/W
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