2SD313 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD313

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter voltage

IC=10mA; IB=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A

VBE

Base-emitter on voltage

IC=1A ; VCE=2V

ICBO

Collector cut-off current

VCB=60V; IE=0

ICEO

Collector cut-off current

VCE=60V; IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=2V

hFE-2

DC current gain

IC=0.1A ; VCE=2V

fT

Transition frequency

IC=0.5A ; VCE=5V

‹ hFE-1Classifications

C

D

E

F

40-80 60-120 100-200 160-320

Product Specification

2SD313

MIN TYP. MAX UNIT

60

V

1.0

V

1.5

V

0.1

mA

5

mA

1

mA

40

320

40

5

MHz

2

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