C2330 데이터 시트보기 (PDF) - TY Semiconductor

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C2330

TO-92L Plastic-Encapsulate NPN Transistors

TY Semiconductor 

Product specification

TO-92L Plastic-Encapsulate Transistors

KSC2330 TRANSISTOR (NPN)

FEATURES

z High Collector-Emitter Breakdown Voltage

z Low Transition Frequency

TO – 92L

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

300

300

7

0.1

0.75

167

150

-55~+150

Unit

V

V

V

A

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

Cob

fT

Test conditions

IC=100µA,IE=0

IC=5mA,IB=0

IE=100µA,IC=0

VCB=200V,IE=0

VEB=6V,IC=0

VCE=10V, IC=20mA

IC=10mA,IB=1mA

VCB=10V,IE=0, f=1MHz

VCE=30V,IC=10mA

Min Typ Max Unit

300

V

300

V

7

V

0.1

μA

0.1

μA

40

240

0.5

V

4

pF

50

MHz

CLASSIFICATION OF hFE

RANK

RANGE

R

40-80

O

70-140

Y

120-240

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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