NTE36 데이터 시트보기 (PDF) - NTE Electronics

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NTE36

Silicon Complementary Transistors

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞

IC = 50mA, RBE = ∞

Emitter–Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0

Turn–On Time

NTE36

NTE37

ton

10IB1 = –10IB2 = IC = 1A,

PW = 20µs

160 –

–

V

140 –

–

V

140 –

–

V

6

–

–

V

µs

– 0.26 –

– 0.25 –

Fall Time

tf

NTE36

NTE37

µs

– 0.68 –

– 0.53 –

Storage Time

ton

NTE36

NTE37

µs

– 6.88 –

– 1.61 –

Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched comple-

mentary pairs have their gain specification (hFE) matched to within 10% of each other.

.190 (4.82)

.787

(20.0)

.615 (15.62)

.591

(15.02)

OR .217

(5.5)

(Note)

.126

(3.22)

Dia

.670 (17.0)

Max

.197 (5.0)

.866

(22.0)

.130 (3.3)

Dia

BC E

.590

(15.0)

.177 (4.5)

.787

(20.0)

B CE

.747

(19.0)

Min

.215 (5.47)

.215 (5.47) .025 (0.65)

NOTE: Either case style may be shipped depending on stock.

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