STGW39NC60VD 데이터 시트보기 (PDF) - STMicroelectronics

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STGW39NC60VD

40 A - 600 V - very fast IGBT

STMicroelectronics 

STGW39NC60VD

Figure 14. Thermal impedance

Electrical characteristics

Figure 15. Turn-off SOA

Figure 16. Emitter-collector diode

characteristics

Figure 17. IC vs. frequency

IFM(A)

120

110

100

90

80

70

60

50

40

30

20

10

0

0

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=25°C

(Maximum values)

VFM(V)

1

2

3

4

5

6

2.2

Frequency applications

For a fast IGBT suitable for high frequency applications, the typical collector current vs.

maximum operating frequency curve is reported. That frequency is defined as follows:

fMAX = (PD - PC) / (EON + EOFF)

● The maximum power dissipation is limited by maximum junction to case thermal

resistance:

Equation 1

PD = ∆T / RTHJ-C

considering ∆T = TJ - TC = 125 °C - 75 °C = 50 °C

● The conduction losses are:

9/15

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