MJL4281A 데이터 시트보기 (PDF) - ON Semiconductor

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MJL4281A

Complementary NPN−PNP Silicon Power Bipolar Transistors

ON Semiconductor 

MJL4281A (NPN) MJL4302A (PNP)

TYPICAL CHARACTERISTICS

1000

1000

TJ = 100°C

100

TJ = 25°C

TJ = 100°C

100

TJ = 25°C

10

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain, VCE = 5 V,

NPN MJL4281A

1000

10

100

0.01

0.1

1

10

100

IC, COLLECTOR CURRENT (A)

Figure 2. DC Current Gain, VCE = 5 V,

PNP MJL4302A

1000

TJ = 100°C

TJ = 25°C

100

TJ = 100°C

100

TJ = 25°C

10

0.01

0.1

1

10

100

IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain, VCE = 20 V,

NPN MJL4281A

10

0.01

0.1

1

10

100

IC, COLLECTOR CURRENT (A)

Figure 4. DC Current Gain, VCE = 20 V,

PNP MJL4302A

1.4

1.2

1

0.8

Vbe(sat)

0.6

0.4

0.2

0

0.01

Vce(sat)

TJ = 25°C

Ic/Ib = 10

0.1

1

10

100

IC, COLLECTOR CURRENT (A)

Figure 5. Typical Saturation Voltage,

NPN MJL4281A

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.01

Vbe(sat)

Vce(sat)

TJ = 25°C

Ic/Ib = 10

0.1

1

10

100

IC, COLLECTOR CURRENT (A)

Figure 6. Typical Saturation Voltage,

PNP MJL4302A

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