2SC2335 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2SC2335 Datasheet PDF : 4 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(SUS)CEO Collector-emitter sustaining voltage IC=3.0A ; IB1=0.6A,L=1mH
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB=400V ;IE=0
VCE=400V ;VBE(off)=-1.5V
TC=125℃
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=1.0A ; VCE=5V
hFE-3
DC current gain
IC=3.0A ; VCE=5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=150V;IC=3.0A;
IB1=-IB2=600mA;
RL=50Ω
hFE-2 Classifications
M
L
K
20-40 30-60 40-80
Product Specification
2SC2335
MIN TYP. MAX UNIT
400
V
1.0
V
1.2
V
10
μA
10
μA
5.0
mA
10
μA
20
80
20
80
10
1.0
μs
2.5
μs
1.0
μs
2
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