FQPF16N25C 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQPF16N25C Datasheet PDF : 8 Pages
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Typical Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
1.0
VGS = 10V
0.5
VGS = 20V
※ Note : TJ = 25℃
0.0
0
10
20
30
40
50
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
Ciss
1500
Coss
1000
Crss
500 ※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 50V
VDS = 125V
8
VDS = 200V
6
4
2
※ Note : ID = 15.6A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
3
FQPF16N25C Rev. C1
www.fairchildsemi.com
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