AP3310GJ 데이터 시트보기 (PDF) - Advanced Power Electronics Corp
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AP3310GJ Datasheet PDF : 6 Pages
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Advanced Power
Electronics Corp.
AP3310GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ 2.5V Gate Drive Capability
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
This device is suited for low voltage and lower power
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
BVDSS
RDS(ON)
ID
-20V
150mΩ
-10A
G
DS
TO-252(H)
G
D
S
TO-251(J)
Rating
- 20
± 12
-10
-6.2
-24
15.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Value
8.0
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
201029074-1/4
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