AP3310GJ 데이터 시트보기 (PDF) - Advanced Power Electronics Corp
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AP3310GJ Datasheet PDF : 6 Pages
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AP3310GH/J
12
I D = -2.8A
10 V DS = -6V
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
DC
T C =25 o C
Single Pulse
0.1
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
f=1.0MHz
1000
Ciss
65mΩ
100
Coss
Crss
10
1
5
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc +
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
-5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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