H7N1004LD 데이터 시트보기 (PDF) - Renesas Electronics

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H7N1004LD

Silicon N-Channel MOSFET High-Speed Power Switching

Renesas Electronics 

H7N1004LD, H7N1004LS, H7N1004LM

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 100

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

IGSS

—

Zero gate voltage drain current

IDSS

—

Gate to source cutoff voltage

VGS(off) 1.5

Static drain to source on state

RDS(on) —

resistance

—

Forward transfer admittance

|yfs|

22

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Total gate charge

Qg

—

Gate to source charge

Qgs —

Gate to drain charge

Qgd —

Turn-on delay time

td(on) —

Rise time

tr

—

Turn-off delay time

td(off) —

Fall time

tf

—

Body-drain diode forward voltage VDF

—

Body-drain diode reverse recovery trr

—

time

Notes: 1. Pulse test

Typ Max

—

—

—

—

—

±10

—

10

—

2.5

25

35

30

45

37

—

2800 —

240 —

140 —

50

—

9

—

11

—

23

—

120 —

70

—

9.5 —

0.9 —

47

—

Unit

V

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

nC

nC

nC

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 100 V, VGS = 0

ID = 1 mA, VDS = 10 V Note 1

ID = 15 A, VGS = 10 V Note 1

ID = 15 A, VGS = 4.5 V Note 1

ID = 15 A, VGS = 10 V Note 1

VDS = 10 V

VGS = 0

f = 1 MHz

VDD = 50 V

VGS = 10 V

ID = 30 A

VGS = 10 V, ID = 15 A

RL = 2 Ω

Rg = 4.7 Ω

IF = 30 A, VGS = 0

IF = 30 A, VGS = 0

diF/dt = 100 A/µs

Rev.6.00, Aug.27.2003, page 3 of 11

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