H7N1004LD 데이터 시트보기 (PDF) - Renesas Electronics
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H7N1004LD Datasheet PDF : 12 Pages
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H7N1004LD, H7N1004LS, H7N1004LM
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I DR (A)
10000
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
Coss
100
50
Crss
20 VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
VDD = 25 V
50 V
160
100 V
20
VGS
16
I D= 30 A
120
12
80
8
40
VDD = 100 V
4
50 V
25 V
VDS 0
0
20 40 60 80 100
Gate Charge Qg (nC)
1000
Switching Characteristics
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty ≤ 1%
tr
RG = 4.7 Ω
100
t d(off)
t d(on)
10
tf
1
0.1 0.3 1 3 10 30 100
Drain Current I D (A)
Rev.6.00, Aug.27.2003, page 6 of 11
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