H7N1004LD 데이터 시트보기 (PDF) - Renesas Electronics

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H7N1004LD

Silicon N-Channel MOSFET High-Speed Power Switching

Renesas Electronics 

H7N1004LD, H7N1004LS, H7N1004LM

Reverse Drain Current vs.

Source to Drain Voltage

50

0, -5 V

VGS = 10 V

40

30

5V

20

10

Pulse Test

0

0.4 0.8 1.2 1.6 2.0

Source Drain Voltage VSD (V)

Maximum Avalanche Energy vs.

Channel Temperature Derating

40

I AP = 15 A

32

V DD = 50 V

duty < 0.1 %

Rg > 50 Ω

24

16

8

0

25 50 75 100 125 150

Channel Temperature Tch (°C)

Vin

15 V

Avalanche Test Circuit

V DS

Monitor

Rg

50 Ω

L

I AP

Monitor

D. U. T

VDD

Avalanche Waveform

EAR =

1

2

• L • I AP2•

VDSS

VDSS – V DD

I AP

ID

V(BR)DSS

VDS

VDD

0

Rev.6.00, Aug.27.2003, page 7 of 11

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