H7N1004DL 데이터 시트보기 (PDF) - Renesas Electronics
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H7N1004DL Datasheet PDF : 9 Pages
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H7N1004DL, H7N1004DS
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
ID = 20 A
60
5, 10 A
40 VGS = 4.5 V
20
ID = 20 A
5, 10 A
VGS = 10 V
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
vs. Drain Current
100
50
20
10
0.1 0.2
0.5 1
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
2 5 10 20 50 100
Drain Current IDR (A)
Dynamic Input Characteristics
200
ID = 25 A
20
VGS
160
16
VDD = 25 V
50 V
120
100 V
12
VDS
80
8
40
VDD = 100 V
4
50 V
25 V
0
0
0
20 40 60 80 100
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
10
1
0.1
0.01
0.01
25°C
75°C
VDS = 10 V
Pulse Test
0.1
1
10
100
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
Ciss
2000
1000
500
200
Coss
100
50
Crss
20
VGS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
tr
300 RG = 4.7 Ω
100
td(off)
30
td(on)
tf
10
3
1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
Rev.1.00 Nov 07, 2006 page 4 of 8
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