DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CMT02N60GN251(2004) 데이터 시트보기 (PDF) - Champion Microelectronic

부품명
상세내역
제조사
CMT02N60GN251
(Rev.:2004)
Champion
Champion Microelectronic Champion
CMT02N60GN251 Datasheet PDF : 6 Pages
1 2 3 4 5 6
CMT02N60
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
CMT02N60N251
CMT02N60N252
CMT02N60N220
CMT02N60N220FP
CMT02N60GN251*
CMT02N60GN252*
CMT02N60GN220*
CMT02N60GN220FP*
*Note: G : Suffix for Pb Free Product
Package
TO-251
TO-252
TO-220
TO-220 Full Package
TO-251
TO-252
TO-220
TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.0A) *
Drain-Source On-Voltage (VGS = 10 V)
(ID = 2.0 A)
Forward Transconductance (VDS 50 V, ID = 1.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 2.0 A,
VGS = 10 V,
RG = 18) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 2.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 2.0 A, VGS = 0 V,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
CMT02N60
Min
Typ
Max
600
0.25
1.0
100
100
2.0
3.1
4.0
3.3
4.4
8.8
1.0
435
56
9.2
12
21
30
24
13
22
2.0
6.0
4.5
7.5
Units
V
mA
nA
nA
V
V
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
VSD
1.0
1.6
V
ton
**
ns
trr
340
ns
2004/12/01 Rev. 1.2
Champion Microelectronic Corporation
Page 2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]