D1546 데이터 시트보기 (PDF) - Inchange Semiconductor

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D1546

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A

VBEsat Base-emitter saturation voltage

IC=5A ;IB=1A

ICBO

Collector cut-off current

VCB=500V; IE=0

IEBO

Emitter cut-off current

hFE

DC current gain

fT

Transition frequency

VEB=5V; IC=0

IC=1A ; VCE=5V

IC=0.1A ; VCE=10V

COB

Collector output capacitance

IE=0 ; VCB=10V;f=1MHz

tf

Fall time

ICP=5A ;IB1(end)=1A

Product Specification

2SD1546

MIN TYP. MAX UNIT

3.0

5.0

V

1.5

V

10

μA

1

mA

8

20

3

MHz

165

pF

0.5

1.0

μs

2

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