UK3919
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
25
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
±64
A
Pulsed Drain Current (Note1)
IDM
±256
A
Single Avalanche Current (Note2)
IAS
27
A
Single Avalanche Energy (Note2)
EAS
73
mJ
Total Power Dissipation
Storage Temperature
PD
36
W
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS VDS =25 V, VGS =0 V
Gate-Body Leakage Current
IGSS VDS =0 V, VGS =±20V
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(OFF) VDS =10V, ID =1mA
Drain-Source On-Resistance
RDS(ON)
VGS =10 V, ID =32 A
VGS =5.0 V, ID =16 A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VDS =10V, VGS =0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Gate to Source Charge
Gate Charge at Threshold
QG
QGS VDD =20V, VGS =10 V,ID =64 A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
VDD =12.5V, ID=32 A, VGS =10V,
tD(OFF) RG =10 Ω
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Body Diode Forward Voltage
VSD IF=64 A, VGS=0 V
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
IF= 64 A,VGS=0 V ,di/dt = 100 A/μs
Notes: 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting TCH= 25℃, VDD = 12.5 V, RG = 25Ω, VGS = 20 → 0 V
MIN TYP MAX UNIT
10 µA
±100 nA
2.0 2.5 3.0 V
4.5 5.6
mΩ
6.8 13.7
2050
460
pF
330
42
8
nC
15
16
19
ns
53
22
0.97
V
23
ns
11
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-200.A