2SA1050 데이터 시트보기 (PDF) - New Jersey Semiconductor

부품명

상세내역

제조사

2SA1050

Silicon PNP Power Transistors

New Jersey Semiconductor 

<3smL-t.onau.ctot iJ-*i

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA1050

DESCRIPTION

• High Current Capability

• Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -140V(Min.)

• Complement to Type 2SC2460

APPLICATIONS

• Designed for power amplifer and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25TJ)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-140

V

VCEO Collector-Emitter Voltage

-140

V

VEBO

Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

Collector Power Dissipation

PC

@TC=25'C

T,

Junction Temperature

Tstg

Storage Temperature

-12

A

100

W

150

•c

-55-150

•c

PIN 1.BASE

2. BETTER

3. COLLECTOR (CASE)

TO-3 package

rr~iC-1

V-

inin

DIM MM MAX

A

3900

e 25.30 XS7

c

7.5C 8M

D

0.90 \0

E

MO t 60

,3,

1 0 92

h

54fr

K XI.. i[ 0 1350

I

K

k—1M9.^7^0

1705

1962

.sL,

u

400

30 flO

420

30 :o

V

4 M 450

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and packagedimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable lit the time of going

to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

Share Link: