C3181N 데이터 시트보기 (PDF) - Inchange Semiconductor
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C3181N Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3181N
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SA1264N
APPLICATIONS
·Power amplifier applications
·Recommend for 55W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
120
5
UNIT
V
V
V
IC
Collector current
8
A
IB
Base current
0.8
A
PT
Total power dissipation
TC=25℃
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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