SMD Type
Transistors
PNP Transistors
■ Typical Characterisitics
40
(1)
30
PC Ta
(1)TC = Ta
(2)With a 50 mm×50 mm ×2 mm
Al heat sink
(3)Without heat sink
(PC = 1.3 W)
20
10
(2)
(3)
0
0
40
80
120 160
Ambient temperature Ta (°C)
2SB928A
−600
−500
−400
−300
−200
−100
IC VCE
TC = 25°C
IB = −4.5 mA
−4.0 mA
−3.5 mA
−3.0 mA
−2.5 mA
−2.0 mA
−1.5 mA
−1.0 mA
− 0.5 mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage V CE (V)
VCE(sat) IC
hFE IC
104
IC / IB =10
V CE = −10 V
−10
−1
− 0.1
T C = 100°C
25°C
−25°C
103
TC = 100°C
25°C
102
−25°C
10
IC VBE
–2.0
V CE = −10 V
–1.6
25°C
–1.2
T C = 100°C
– 0.8
– 0.4
−25°C
0
0 – 0.2 − 0.4 − 0.6 − 0.8 −1.0
Base-emitter voltage VBE (V)
fT IC
104
VCE = −10 V
f = 10 MHz
TC = 25°C
103
102
10
− 0.01
− 0.01
− 0.1
−1
Collector current I C (A)
Safe operation area
–10
ICP
Non repetitive pulse
TC = 25°C
t= 0.5 ms
IC
–1
t= 5 ms
t= 1 ms
– 0.1
t= 300 ms
1
− 0.01
− 0.1
−1
−10
Collector current I C (A)
R th
103
102
10
1
− 0.01
− 0.1
−1
−10
Collector current CI (A)
t
(1)Without heat sink
(2)With a 50 mm×50 mm ×2 mm Al heat sink
(1)
(2)
1
10 −1
– 0.01
–1
10−2
–10
–100
–1 000
10−4
10−3
10−2
10−1
1
10
102
103
104
Collector-emitter voltage V CE (V)
Time t (s)
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