2SA1068 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SA1068

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=B -0.5A

VBEsat Base-emitter saturation voltage

IC=-5A ;IB=B -0.5A

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-3A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-10V

Product Specification

2SA1068

MIN TYP. MAX UNIT

-150

V

-2.0

V

-2.5

V

-0.1 mA

-0.1 mA

60

150

50

MHz

2

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