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BD9329AEFJ-LB 데이터 시트보기 (PDF) - ROHM Semiconductor

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BD9329AEFJ-LB Datasheet PDF : 21 Pages
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BD9329AEFJ-LB
Absolute Maximum Ratings(Ta = 25)
Parameter
Symbol
Ratings
Unit
Supply Voltage
VIN
20
V
Switch Voltage
VSW
Power Dissipation for HTSOP-J8
Pd
Package thermal resistance θja *2
θja
Package thermal resistance θjc *2
θjc
20
3760 *1
29.27
3.75
V
mW
/W
/W
Operating Temperature Range
Topr
-40 to +85
Storage Temperature Range
Tstg
-55 to +150
Maximum Junction Temperature
Tjmax
150
BST Voltage
VBST
VSW+7
V
EN Voltage
VEN
20
V
All other pins
VOTH
20
V
*1 Derating in done 30.08 mW/for operating above Ta25(Mount on 4-layer 70.0mm×70.0mm×1.6mm board)
*2 Mount on 4-layer 50mm x 30mm x 1.6mm application board
Operating Ratings (Ta= -40 to 85)
Parameter
Supply Voltage
SW Voltage
Output current
Output voltage range
Symbol
Min
VIN
4.2
VSW
-0.5
ISW3
-
VRANGE
0.9
Ratings
Unit
Typ
Max
12
18
V
-
18
V
-
3
A
-
VIN x 0.7 V
Datasheet
Electrical Characteristics (Unless otherwise specified VIN=12V Ta=25)
Parameter
Limits
Symbol
Min
Typ
Error amplifier block
FB input bias current
IFB
-
0.02
Feedback voltage1
VFB1
0.886 0.900
Feedback voltage2
VFB2
0.882 0.900
SW block – SW
Hi-side FET On-resistance
RONH
-
0.15
Lo-side FET On-resistance
RONL
-
0.13
Hi/Lo-side FET Leak current
ILEAKN
-
0
Switch Current Limit
ILIMIT3
3.5
-
Maximum duty cycle
MDUTY
-
90
General
Enable Sink current
IEN
90
180
Enable Threshold voltage
VEN
1.0
1.2
Under Voltage Lockout threshold
VUVLO
3.5
3.75
Under Voltage Lockout Hysteresis
VHYS
-
0.3
Soft Start Current
ISS
5
10
Soft Start Time
TSS
-
22
Operating Frequency
FOSC
300
380
Circuit Current
ICC
-
1.2
Standby Current
IQUI
-
15
Max
2
0.914
0.918
-
-
10
-
-
270
1.4
4.0
-
15
-
460
3
27
Unit
Conditions
µA
V Voltage follower
V Ta=-25to 85
ISW= -0.8A
ISW= 0.8A
µA
VIN= 18V,
VSW = 0V / 18V
A
% VFB= 0V
µA VEN= 12V
V
V VIN rising
V
µA VSS= 0 V
ms CSS= 0.1 µF
kHz
mA VFB= 1.5V, VEN= 12V
µA VEN= 0V
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
3/18
TSZ02201-0323AAJ00320-1-2
27.Feb.2014 Rev.002

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