STF8N80K5 데이터 시트보기 (PDF) - STMicroelectronics
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STF8N80K5
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STF8N80K5 Datasheet PDF : 15 Pages
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STF8N80K5, STFI8N80K5
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS
ID
ID
(2)
IDM
PTOT
(3)
IAR
Gate-source voltage
Drain current TC = 25 °C
Drain current TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Max current during repetitive or single
pulse avalanche
(4)
EAS
VISO
(5)
dv/dt
(6)
dv/dt
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tj
Operating junction temperature
Tstg Storage temperature
1. Limited by package.
2. Pulse width limited by safe operating area.
3. Pulse width limited by TJmax.
4. Starting TJ = 25 °C, ID=IAS, VDD= 50 V
5. ISD ≤ 6 A, di/dt ≤ 100 A/μs, VDS(peak) ≤ V(BR)DSS
6. VDS ≤ 640 V
± 30
(1)
6
(1)
4
(1)
24
25
2
114
2500
4.5
50
-55 to 150
Symbol
Table 3. Thermal data
Parameter
Value
Rthj-case Thermal resistance junction-case max.
Rthj-amb Thermal resistance junction-amb max.
5
62.5
Unit
V
A
A
A
W
A
mJ
V
V/ns
V/ns
°C
°C
Unit
°C/W
°C/W
DocID024419 Rev 2
3/15
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