2SD2618 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SD2618 Datasheet PDF : 1 Pages
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Transistors
Power Transistor (80V, 4A)
2SD2618
2SD2618
!Features
1) Darlington connection for a high hFE.
2) Built-in resistor between base and emitter.
3) Built-in damper doide.
4) Complements the 2SB1676.
!Circuit diagram
C
B
R
E
R 300Ω
B : Base
C : Collector
E : Emitter
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector power dissipation
PC
Junction temperature
Storage temperature
Tj
Tstg
Limits
80
80
7
4
6
2
30
150
−55~+150
Unit
V
V
V
A (DC)
A (t = 100ms)
W
W (Tc = 25°C)
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SD2618
TO-220FN
1k~10k
-
500
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
80
-
-
V
IC = 50µA
Collector-emitter breakdown voltage BVCEO
80
-
-
V
IC = −1mA
Collector cutoff current
ICBO
-
-
100
µA VCB = 80V
Emitter cutoff current
IEBO
-
-
10
µA VEB = 5V
Collector-emitter saturation voltage
VCE(sat)
-
-
1.5
V
IC/IB = 2A/4mA
*1
DC current transfer ratio
hFE
1000
-
10000
-
VCE/IC = 3V/2A
*1
Transition frequency
fT
-
40
-
MHz VCE = 5V , IE = −0.2A , f = 10MHz
*2
Output capacitance
Cob
-
35
-
pF VCB = 10V , IE = 0A , f = 1MHz
* * 1 Measured using pulse current.
2 Transition frequency of the device.
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