2SB1237TV2P 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SB1237TV2P Datasheet PDF : 4 Pages
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Medium Power Transistor (32V,1A)
2SA1515S / 2SB1237
Features
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
(IC / IB = 500mA / 50mA)
2) Compliments 2SD1858
Structure
Epitaxial planar type
PNP silicon transistor
Dimensions (Unit : mm)
2SA1515S
4 +− 0.2
2 +− 0.2
2SB1237
6.8+− 0.2
2.5+− 0.2
0.45
+0.15
−0.05
2.5
+0.4
−0.1
0.5
0.45
+0.15
−0.05
5
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
0.65Max.
0.5+− 0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45+− 0.1
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−40
V
Collector-emitter voltage
VCEO
−32
V
Emitter-base voltage
VEBO
−5
V
Collector current
−1
A(DC)
IC
−2 ∗1
A(Pulse)
Collector power 2SA1515S
dissipation
2SB1237
PC
0.3
W
1 ∗2
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
∗1 Single pulse, Pw=100ms
∗2 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger.
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO −40
−
−
V IC= −50μA
Collector-emitter breakdown voltage
BVCEO −32
−
−
V IC= −1mA
Emitter-base breakdown voltage
Collector cutoff current
BVEBO −5
ICBO
−
−
−
V IE= −50μA
− −0.5 μA VCB= −20V
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
IEBO
−
− −0.5 μA VEB= −4V
VCE(sat)
−
−0.2 −0.5
V
IC/IB= −500mA/−50mA
∗
hFE
120
−
390
− VCE= −3V, IC= −0.1A
∗
fT
− 150 − MHz VCE= −5V, IE=50mA, f=30MHz
Output capacitance
∗ Measured using pulse current.
Cob
−
20 30 pF VCB= −10V, IE=0A, f=1MHz
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○c 2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.D
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