SVF2N60M 데이터 시트보기 (PDF) - Silan Microelectronics
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SVF2N60M Datasheet PDF : 10 Pages
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SVF2N60M/F/T/D_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol Test conditions
Continuous Source Current
Pulsed Source Current
IS
Integral Reverse P-N
Junction Diode in the
ISM
MOSFET
Diode Forward Voltage
VSD
IS=2.0A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Trr
IS=2.0A,VGS=0V,
Qrr
dIF/dt=100A/µS
1. L=30mH, IAS=2.52A, VDD=145V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
Typ.
--
--
Max.
2.0
8.0
Unit
A
--
--
1.4
V
--
230 --
ns
--
1.0
--
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.21
Page 3 of 10
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