SWI2N60 데이터 시트보기 (PDF) - Xian Semipower Electronic Technology Co., Ltd.
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SWI2N60 Datasheet PDF : 7 Pages
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SAMWIN
SW2N60
Features
■ High ruggedness
■ RDS(ON) (Max 5.0 Ω)@VGS=10V
■ Gate Charge (Max 15nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-251
TO-252
12
3
12
3
1. Gate 2. Drain 3. Source
N-channel MOSFET
BVDSS : 600V
ID
: 2.0A
RDS(ON) : 5.0ohm
2
1
General Description
3
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and SMPS. It’s typical application is TV and monitor.
Order Codes
Item
1
2
Sales Type
SW I 2N60
SW D 2N60
Marking
SW2N60
SW2N60
Package
TO-251
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
600
2.0
1.2
8.0
± 30
154
4.7
4.5
40
0.37
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
Rthjc
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Value
3.2
110
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Unit
oC/W
oC/W
1/7
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