SWI2N60 데이터 시트보기 (PDF) - Xian Semipower Electronic Technology Co., Ltd.
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SWI2N60 Datasheet PDF : 7 Pages
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SAMWIN
SW2N60
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
V
GS
Top : 15.0 V
10.0 V
9.0 V
8.0 V
7.0 V
100 Bottom : 5.5 V
10-1
10-2
10-1
*. Notes :
1. 250¥ىs Pulse Test
2. T = 25OC
C
100
101
V , Drain-Source Voltage [V]
DS
Fig. 3. On-resistance variation vs.
drain current and gate voltage
12
10
8
V = 10V
GS
6
4
V = 20V
GS
2
*. Note : T = 25OC
J
0
0
1
2
3
4
5
6
I , Drain Current [A]
D
Fig. 5. Capacitance characteristics
(Non-Repetitive)
500
400
300
C
iss
C =C +C (C =shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
*. Notes :
1. V = 0V
GS
2. f=1MHz
200
C
oss
100
C
rss
0
5
10
15
20
25
30
35
40
V , Drain-Source Voltage [V]
DS
100
10-1
2
150oC
25oC
-55oC
*. Notes :
1. V = 40V
DS
2. 250us Pulse Test
3
4
5
6
7
8
9
10
V , Gate-Source Voltage [V]
GS
Fig. 4. On state current vs.
diode forward voltage
100
150OC
25OC
*. Notes :
1. V = 0V
GS
2. 250us Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain voltage [V]
SD
Fig. 6. Gate charge characteristics
12
V = 300V
10
DS
V = 480V
DS
8
6
4
2
*. Note : I = 2.0A
D
0
0
1
2
3
4
5
6
7
8
Q , Total Gate Charge [nC]
G
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