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JCS5N60RB 데이터 시트보기 (PDF) - Jilin Sino-Microelectronics

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JCS5N60RB
Hwdz
Jilin Sino-Microelectronics Hwdz
JCS5N60RB Datasheet PDF : 12 Pages
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R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25)
JCS5N60B
数值
项目
符号
Value
Parameter
Symbol
Uni
JCS5N60VB/RB JCS5N60CB JCS5N60FB
t
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
600
V
连续漏极电流
ID
5.0
T=25
Drain Current -continuous
T=100
2.5
5.0*
A
2.5*
A
最大脉冲漏极电流(注 1
Drain Current - pulse
IDM
note 1
16
16*
A
最高栅源电压
Gate-Source Voltage
VGSS
±30
V
单脉冲雪崩能量(注 2
Single Pulsed Avalanche
Energy
EAS
note 2
240
mJ
雪崩电流(注 1
Avalanche Current
IAR
note 1
5.0
A
重复雪崩能量(注 1
Repetitive Avalanche Current EAR
note 1
10.0
mJ
二极管反向恢复最大电压变化
速率(注 3
Peak Diode Recovery
dv/dt note 3
dv/dt
V/n
5.5
s
耗散功率
Power Dissipation
PD
TC=25
-Derate
above
25
51
0.39
100
33
W
W/
0.80
0.26
最高结温及存储温度
Operating and Storage
TJTSTG
-55+150
Temperature Range
引线最高焊接温度
Maximum Lead Temperature TL
for Soldering Purposes
300
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
版本:201011A
2/12

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