BC213 데이터 시트보기 (PDF) - Motorola => Freescale

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BC213

Amplifier Transistors PNP Silicon

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BC212/D

Amplifier Transistors

PNP Silicon

COLLECTOR

3

2

BASE

1

EMITTER

MAXIMUM RATINGS

Rating

BC BC BC

Symbol 212 213 214 Unit

Collector – Emitter Voltage

Collector – Base Voltage

Emitter – Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

VCEO

VCBO

VEBO

IC

PD

–50 –30 –30

–60 –45 –45

–5.0

–100

350

2.8

Vdc

Vdc

Vdc

mAdc

mW

mW/°C

Total Device Dissipation @ TC = 25°C

PD

Derate above 25°C

1.0

Watts

8.0

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient RqJA

357

°C/W

Thermal Resistance, Junction to Case

RqJC

125

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Collector – Emitter Breakdown Voltage

(IC = –2.0 mAdc, IB = 0)

BC212

BC213

BC214

V(BR)CEO

–50

–30

–30

Collector – Base Breakdown Voltage

(IC = –10 mA, IE = 0)

BC212

BC213

BC214

V(BR)CBO

–60

–45

–45

Emitter – Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

BC212

BC213

BC214

V(BR)EBO

–5

–5

–5

Collector–Emitter Leakage Current

(VCB = –30 V)

BC212

BC213

BC214

ICBO

—

—

—

Emitter–Base Leakage Current

(VEB = –4.0 V, IC = 0)

BC212

BC213

BC214

IEBO

—

—

—

BC212,B

BC213

BC214

1

2

3

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

Typ

Max

Unit

—

—

Vdc

—

—

—

—

—

—

Vdc

—

—

—

—

—

—

Vdc

—

—

—

—

—

–15

nAdc

—

–15

—

–15

—

–15

nAdc

—

–15

—

–15

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1

© Motorola, Inc. 1996

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