BC212 데이터 시트보기 (PDF) - TY Semiconductor

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BC212

TO-92 Plastic-Encapsulate PNP Transistors

TY Semiconductor 

Product specification

TO-92 Plastic-Encapsulate Transistors

BC212 TRANSISTOR (PNP)

FEATURES

z General Purpose Switching and Amplification.

TO – 92

1.EMITTER

2.BASE

3.COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-60

-50

-5

-0.1

0.35

357

150

-55~+150

Unit

V

V

V

A

W

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

hFE

VCE(sat)

VBE(sat)

VBE

fT

Cob

Test conditions

Min

IC= -0.01mA,IE=0

-60

IC=-2mA,IB=0

-50

IE=-0.01mA,IC=0

-5

VCB=-30V,IE=0

VCE=-30V,IB=0

VEB=-4V,IC=0

BC212 140

VCE=-5V, IC=-2mA BC212B 140

BC212C 350

IC=-100mA,IB=-5mA

IC=-100mA,IB=-5mA

VCE=-5V, IC=-2mA

VCE=-5V,IC=-10mA,f=100MHz

200

VCB=-10V,IC=0, f=1MHz

Typ Max Unit

V

V

V

-15 nA

-0.1 μA

-15 nA

600

400

600

-0.6

V

-1.2

V

-0.72 V

MHz

6

pF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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