2SC2073 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC2073

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC2073

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA

VBE(on) Base-Emitter On Voltage

IC= 500mA ; VCE= 10V

ICBO

Collector Cutoff Current

VCB= 120V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.5

V

0.85 V

10 μA

10 μA

hFE

DC Current Gain

IC= 500mA ; VCE= 10V

40

140

COB

fT

www.iscsemi.cn Output Capacitance

IE= 0; VCB= 10V; ftest= 1MHz

35

Current-Gain—Bandwidth Product

IC= 500mA; VCE= 10V

4

pF

MHz

isc Website：www.iscsemi.cn

2

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