BCR8PM 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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BCR8PM Datasheet PDF : 11 Pages
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The product guaranteed maximum junction
temperature 150°C (See warning.)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120140 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
160
TYPICAL EXAMPLE
140
Tj = 150°C
120
100
80
60
40
III QUADRANT
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
(Tj = 150°C)
7
5
SUPPLY
VOLTAGE
3 MAIN CURRENT
MAIN
2 VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
101
f = 3Hz
7
III QUADRANT
5
I QUADRANT
3
2
MINIMUM
CHARAC-
100
7
100
23
TERISTICS
VALUE
5 7 101 2 3 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 125°C)
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
80
60
III QUADRANT
40
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
7
5
SUPPLY
VOLTAGE
MAIN CURRENT
3
MAIN
2 VOLTAGE
(dv/dt)c
101
7
5 MINIMUM
CHARAC-
3 TERISTICS
2 VALUE
TIME
(di/dt)c
TIME
TIME
VD
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
100
7
100 2 3 5 7 101
23
5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5
IFGT I
4
3
IRGT I
2
IRGT III
102
7
5
4
3
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Mar. 2002
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