BCR8PM-16
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8PM-16
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2 ± 0.2
✽
1.3 MAX
0.8
¡IT (RMS) ........................................................................ 8A
¡VDRM ....................................................................... 800V
¡IFGT !, IRGT !, IRGT # ........................................... 30mA
¡Viso ........................................................................ 2000V
¡UL Recognized: Yellow Card No. E80276(N)
File No. E80271
APPLICATION
Washing machine, other general purpose control applications
2.54
2.54
0.5
2.6
➀➁➂
✽ Measurement point of
case temperature
➁
➀ T1 TERMINAL
➁ T2 TERMINAL
➂ ➂ GATE TERMINAL
➀
TO-220F
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class
16
800
960
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
Viso
Isolation voltage
✽1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=88°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Unit
V
V
Ratings
Unit
8
A
80
A
26
A2s
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
2000
V
Mar. 2002