GZB10 데이터 시트보기 (PDF) - SANYO -> Panasonic
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GZB10 Datasheet PDF : 3 Pages
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Ordering number:EN1349C
Features
· Glass sleeve structure.
· Voltage regulator, surge absorber applications.
· Power dissipation : P=1.0mW.
· Zener voltage : VZ=2.0 to 36 V.
· Small-sized package : JEDEC DO-41
GZB2.0 to 36
Silicon Planar Type
1.0W Zener Diode
Package Dimensions
unit:mm
1134
[GZB2.0 to 36]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Type No.
GZB2.0
GZB2.2
GZB2.4
GZB2.7
GZB3.0
GZB3.3
GZB3.6
GZB3.9
GZB4.3
GZB4.7
GZB5.1
GZB5.6
GZB6.2
GZB6.8
Zener Characteristics
Zener Voltage, Vz [V]
(t =30ms)
B
C
Dynamic Resistance
rd [Ω]
f=1kHz
min
min
min
min
min
min
1.88
2.12
2.00
2.24
15
25
2.08
2.33
2.20
2.45
12
20
2.28
2.56
2.4
2.7
12
20
2.5
2.9
2.7
3.1
9
15
2.8
3.2
3.0
3.4
9
15
3.1
3.5
3.3
3.7
9
15
3.4
3.8
3.6
4.0
9
15
3.7
4.1
3.9
4.4
9
15
4.0
4.5
4.3
4.8
9
15
4.4
4.9
4.7
5.2
7
10
4.8
5.4
5.1
5.7
5
8
5.3
6.0
5.6
6.3
5
8
5.8
6.6
6.2
7.0
3
6
6.4
7.2
6.8
7.7
3
6
Messured
Current
[mA]
40
40
40
40
40
40
40
40
40
40
40
40
40
40
C:Cathode
A:Anode
Ratings
Unit
1W
175 ˚C
–55 to +175 ˚C
Reverse Current
Messured
IR
Voltage
VR
[µA]
[V]
200
0.5
200
0.7
200
1
200
1
100
1
80
1
60
1
40
1
20
1
20
1
20
1
20
1.5
20
3
20
3.5
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62098HA (KT)/2089TA/1179TA/9194MY, TS No.1349-1/3
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