SVD7N65AT 데이터 시트보기 (PDF) - Silan Microelectronics

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SVD7N65AT

7A, 650V N-CHANNEL MOSFET

Silan Microelectronics 

SVD7N65AT/F_Datasheet

7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION

SVD7N65AT/F is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary

S-RinTM structure DMOS technology. The improved planar stripe

cell and the improved guard ring terminal have been especially

tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V

∗ Low gate charge

∗ Low Crss

∗ Fast switching

∗ Improved dv/dt capability

NOMENCLATURE

ORDERING SPECIFICATIONS

Part No.

SVD7N65AT

SVD7N65AF

Package

TO-220-3L

TO-220F-3L

Marking

SVD7N65AT

SVD7N65AF

Material

Pb free

Pb free

Packing

Tube

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HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.1

2010.11.10

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