2SB1274 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SB1274

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

2SB1274

MIN TYP. MAX UNIT

V(BR)CBO Collector-base breakdown voltage

IC=-1mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; RBE=∞

V(BR)EBO Base-emitter breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-0.2A

-60

V

-60

V

-6

V

-0.4 -1.0

V

VBE

Base-emitter voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-0.5A ; VCE=-5V

VCB=-40V;IE=0

VEB=-4V;IC=0

-0.8 -1.0

V

-0.1 mA

-0.1 mA

hFE-1

DC current gain

IC=-0.5A ; VCE=-5V

70

280

hFE-2

导体 fT

固I电NC半HANGE SEMICONDUCTOR COB

DC current gain

Transition frequency

Output capacitance

‹ hFE-1 classifications

Q

R

S

IC=-3A ; VCE=-5V

IC=-0.5A ; VCE=-5V

IE=0; VCB=-10V;f=1MHz

20

100

60

MHz

pF

70-140 100-200 140-280

2

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