L2N7002EM3T5G 데이터 시트보기 (PDF) - Leshan Radio Company,Ltd

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L2N7002EM3T5G

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–723

Leshan Radio Company,Ltd 

LESHAN RADIO COMPANY, LTD.

L2N7002EM3T5G , S-L2N7002EM3T5G

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Parameter

Symbol Min.

Gate-source leakage current

IGSS

−

Drain-source breakdown voltage V (BR) DSS 60

Zero gate voltage drain current

IDSS

−

Gate threshold voltage

VGS (th)

1

−

Drain-source on-state resistance RDS (on)∗

−

Forward transfer admittance

l Yfs l∗

80

Input capacitance

Ciss

−

Output capacitance

Coss

−

Reverse transfer capacitance

Crss

−

Turn-on delay time

Turn-off delay time

td (on)∗

−

td (off)∗

−

∗ PW≤300µs, Duty cycle≤1%

Typ.

−

−

−

1.85

−

−

−

25

10

3.0

12

20

Max.

±10

−

1

2.5

7.5

7.5

−

50

25

5.0

20

30

Unit

Test Conditions

µA VGS=±20V, VDS=0V

V ID=10µA, VGS=0V

µA VDS=60V, VGS=0V

V VDS=VGS , ID=250uA

ID=0.5A, VGS=10V

Ω

ID=0.05A, VGS=5V

mS VDS=10V, ID=0.2A

pF VDS=25V

pF VGS=0V

pF f=1MHz

ns ID=200mA, VDD 30V

ns VGS=10V, RL=150Ω ,RGS=10Ω

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≤

Rev .O 2/4

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