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BSZ110N06NS3G 데이터 시트보기 (PDF) - Infineon Technologies
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BSZ110N06NS3G
OptiMOSTM3 Power-Transistor
Infineon Technologies
BSZ110N06NS3G Datasheet PDF : 9 Pages
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2
3
4
5
6
7
8
9
1 Power dissipation
P
tot
=f(
T
C
)
2 Drain current
I
D
=f(
T
C
);
V
GS
≥
10 V
BSZ110N06NS3 G
60
25
50
20
40
15
30
10
20
5
10
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
2
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
1
1 µs
10 µs
10
1
10
0
10
-1
10
-1
Rev.2.4
100 µs
1 ms
0.5
10
0
0.2
0.1
0.05
10
-1
0.02
0.01
10 ms
DC
10
0
10
1
10
2
V
DS
[V]
single pulse
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
page 4
2009-11-12
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