BSZ110N06NS3G 데이터 시트보기 (PDF) - Infineon Technologies
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BSZ110N06NS3G Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=20 A; V GS=10 V
BSZ110N06NS3 G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
20
5
18
16
4
14
12
max
10
typ
8
3
230 µA
23 µA
2
6
1
4
2
-60 -20
20
60 100 140 180
T j [°C]
0
-60
-20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104 10000
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
103
1000
102
100
101
10
1
0
Rev.2.4
Ciss
Coss
Crss
20
40
V DS [V]
102
150°C 98%
150 °C
25 °C
101
100
60
0
page 6
25°C 98%
0.5
1
1.5
V SD [V]
2
2009-11-12
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