BSC110N06NS3G 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

제조사

BSC110N06NS3G

OptiMOS™3 Power-Transistor

Infineon Technologies 

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Power dissipation

P tot

T C=25 °C

T A=25 °C,

R thJA=50 K/W2)

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

BSC110N06NS3 G

Value

Unit

50

W

2.5

-55 ... 150

°C

55/150/56

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

Thermal resistance, junction - case R thJC

-

Device on PCB

R thJA minimal footprint

-

6 cm² cooling area2)

-

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

V (BR)DSS V GS=0 V, I D=1 mA

60

V GS(th) V DS=V GS, I D=23 µA

2

I DSS

V DS=60 V, V GS=0 V,

T j=25 °C

-

V DS=60 V, V GS=0 V,

T j=125 °C

-

I GSS

V GS=20 V, V DS=0 V

-

R DS(on) V GS=10 V, I D=50 A

-

RG

-

g fs

|V DS|>2|I D|R DS(on)max,

I D=50 A

25

-

2.5 K/W

-

62

-

50

-

-V

3

4

0.1

1 µA

10

100

10

100 nA

9.0

11 mΩ

1.3

-Ω

50

-S

Rev.2.3

page 2

2009-10-29

Share Link: