BSC110N06NS3G 데이터 시트보기 (PDF) - Infineon Technologies
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BSC110N06NS3G Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
125 °C 100 °C
25 °C
10
BSC110N06NS3 G
14 Typ. gate charge
V GS=f(Q gate); I D=50 A pulsed
parameter: V DD
12
30 V
10
12 V
48 V
8
6
1
4
2
0.1
0.1
0
1
10
100
1000
0
t AV [µs]
10
20
30
Q gate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
70
V GS
65
Qg
60
55
V g s(th)
50
Rev.2.3
45
Q g(th)
40
-60
-20
20
60 100 140 180
T j [°C]
Q gs
page 7
Q sw
Q gd
Q gate
2009-10-29
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