RU4099 데이터 시트보기 (PDF) - Ruichips Semiconductor Co., Ltd
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RU4099 Datasheet PDF : 12 Pages
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RU4099
N-Channel Advanced Power MOSFET
Features
· 40V/200A
RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V
·Avalanche Rated
· Reliable and Rugged
· Lead Free and Green Devices Available
Applications
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS
·High Speed Power Switching
Pin Description
TO-220
TO-263
TO-220F
TO-247
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
TC=25°C
IDP
300µs Pulsed Drain Current Tested
ID
Continue Drain Current
PD
Maximum Power Dissipation
RθJC
Thermal Resistance -Junction to Case
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
RθJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy ,Single Pulsed
Storage Temperature Range
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B –JUN., 2010
Rating
40
±25
175
-55 to 175
200
①
800
②
200
140
400
230
0.45
62.5
1400
Unit
V
°C
°C
A
A
W
°C/W
mJ
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