RU4099 데이터 시트보기 (PDF) - Ruichips Semiconductor Co., Ltd
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RU4099 Datasheet PDF : 12 Pages
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RU4099
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU4099
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
40
SyImDSbS ol Zero Gate Voltage Drain Current
VDS= 40V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
2
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
③
RDS(ON)
Drain-Source On-state Resistance
VGS= 10V, IDS=40A
V
1
µA
30
3
4
V
±100 nA
2.8 3.5 mΩ
Diode Characteristics
③
VSD
Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
④
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
④
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=40 A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=35V, RL=35Ω,
IDS= 1A, VGEN= 10V,
RG=6Ω
VDS=30V, VGS= 10V,
IDS=40A
0.77 1.2 V
74
ns
148
nC
1.4
Ω
5750
1400
pF
480
21 40
37 69
ns
75 136
115 208
154 218
44
nC
47
Notes:
①Pulse width limited by safe operating area.
②Current limited by package( Limitation Current is 75A )
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
2
Rev.B –JUN., 2010
www.ruichips.com
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