ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 µAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 75 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
VGS(th)
VDS(on)
VGS(q)
Ciss
Coss
Crss
Gps
Drain Efficiency
η
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
IMD
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
IRL
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common–Source Power Gain
Gps
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
η
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
IMD
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
IRL
(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common–Source Power Gain
Gps
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
Drain Efficiency
η
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
Output Mismatch Stress
Ψ
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1,
All Phase Angles at Frequency of Test)
Min
Typ
Max
Unit
2.0
3.0
4.0
Vdc
—
0.4
0.6
Vdc
3.0
4.0
5.0
Vdc
—
15
—
pF
—
8.0
—
pF
—
0.45
—
pF
10.5
11.5
—
dB
28
—
—
%
—
–31
–28
dBc
—
–14
–9
dB
10.5
11.5
—
dB
28
—
—
%
—
–31
–28
dBc
—
–14
–9
dB
9.5
11.5
—
dB
35
40
—
%
No Degradation In Output Power
MRF282SR1 MRF282ZR1
2
MOTOROLA RF DEVICE DATA