STPS40M80C 데이터 시트보기 (PDF) - STMicroelectronics
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STPS40M80C Datasheet PDF : 10 Pages
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STPS40M80C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 10 A
IF = 20 A
IF = 40 A
-
15
65
µA
-
15
40
mA
-
0.550 0.600
-
0.475 0.510
-
0.655 0.735
V
-
0.570 0.635
-
0.800 0.920
-
0.680 0.795
To evaluate the conduction losses use the following equation:
P = 0.475 x IF(AV) + 0.008 x IF2(RMS)
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
22 PF(AV)(W)
20
T
18 δ = tp / T tp
16
14
12
δ = 0.1
δ = 0.05
10
8
6
δ = 0.2
δ = 0.5
δ=1
24 IF(AV)(A)
22
20
18
16
14
12
10
8
6
Rth(j-a) = Rth(j-c)
4
4
2
IF(AV)(A)
2
Tamb(°C)
0
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
0
25
50
75
100
125
150
175
Figure 4. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
1.2 PARM(25 °C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
tp(µs)
0
Tj(°C)
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Doc ID 018718 Rev 1
3/10
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