STPS40M80C 데이터 시트보기 (PDF) - STMicroelectronics
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STPS40M80C Datasheet PDF : 10 Pages
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Characteristics
STPS40M80C
Figure 6.
Non repetitive surge peak forward Figure 7.
current versus overload duration
(maximum values, per diode)
Relative thermal impedance
junction to case versus pulse
duration
260 IM(A)
240
220
200
180
160
140
120
100
80
60
40
IM
20
0
1.E-03
t
δ = 0.5
1.E-02
1.E-01
Tc = 25 °C
Tc = 75 °C
Tc = 125 °C
t(s)
1.E+00
1.0 Zth(j-c)/Rth(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 Single pulse
0.1
0.0
1.E-04
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
Figure 8.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
1.E+05 IR(µA)
Tj = 150 °C
1.E+04
1.E+03
1.E+02
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
Figure 9.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
10000
F = 1 MHz
Vosc = 30 mVRMS
Tj = 25 °C
1000
1.E+01
Tj = 25 °C
1.E+00
0
VR(V)
10
20
30
40
50
60
70 80
100
1
VR(V)
10
100
Figure 10. Forward voltage drop versus
forward current (per diode)
40 IFM(A)
35
Tj = 125 °C
(Maximum values)
30
25
Tj = 125 °C
20
(Typical values)
15
10
Tj = 25 °C
(Maximum values)
5
0
VFM(V)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 11. Reverse safe operating area
(tp < 1 µs and Tj < 150 °C)
30.0 Iarm (A)
29.0
Iarm (Varm) 150 °C, 1 µs
28.0
27.0
26.0
25.0
24.0
23.0
22.0
21.0
Varm (V)
20.0
100 105 110 115 120 125 130 135 140 145 150
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Doc ID 018718 Rev 1
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