2N3055 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2N3055 Datasheet PDF : 4 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N3055
DESCRIPTION
·With TO-3 package
·Complement to type MJ2955
·DC Current Gain -hFE = 20–70 @ IC = 4 Adc
·Collector–Emitter Saturation Voltage -
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
·Excellent Safe Operating Area
APPLICATIONS
·Designed for general–purpose switching
and amplifier applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
100
60
7
15
7
115
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.52
UNIT
℃/W
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