2N3055A 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2N3055A Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3055A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO
VCEsat-1
VCEsat-2
VCEsat-3
Collector-emitter sustaining voltage IC=0.2A ;IB=0
Collector-emitter saturation voltage IC=4A; IB=0.4A
Collector-emitter saturation voltage IC=10A; IB=3.3A
Collector-emitter saturation voltage IC=15A; IB=7.0A
60
V
1.1
V
3.0
V
5.0
V
VBE
ICEO
ICEV
IEBO
hFE-1
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4A ; VCE=4V
VCE=30V; VBE(off)=0
VCE=Rated Value; VBE(off)=1.5V
TC=150
VEB=7V; IC=0
IC=4A ; VCE=2V
10
1.8
V
0.7
mA
5.0
30
mA
5.0
mA
70
hFE-2
DC current gain
IC=4A ; VCE=4V
20
70
hFE-3
Is/b
COB
DC current gain
IC=10A ; VCE=4V
Second breakdown collector current VCE=60Vdc,t=0.5 s,
With base forward biased
Nonrepetitive
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
fT
Transition frequency
IC=1A ; VCE=4V;f=1.0MHz
Switching times resistive load
5
1.95
60
0.8
A
600
pF
MHz
td
Delay time
0.5
µs
tr
Rise time
ts
Storage time
tf
Fall time
VCC=30V;IC=4.0A
IB1=IB2=0.4A
tp=25µs; Duty Cycle2%
4.0
µs
3.0
µs
6.0
µs
2
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