2SD1134 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD1134

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1134

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= 10μA ; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 10μA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A

VBE(on) Base-Emitter On Voltage

IC= 1A ; VCE= 4V

ICBO

Collector Cutoff Current

VCB= 50V ; IE= 0

hFE-1

DC Current Gain

IC= 1A ; VCE= 4V

hFE-2

DC Current Gain

IC= 0.1A ; VCE= 4V

fT

Current-Gain—Bandwidth Product

IC= 0.5A ; VCE= 4V

MIN TYP. MAX UNIT

60

V

70

V

5

V

1.0

V

1.0

V

1

μA

60

320

35

7

MHz

‹ hFE-1 Classifications

B

C

D

60-120 100-200 160-320

isc Website：www.iscsemi.cn

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